Abstract
Vertical external cavity surface emitting lasers are ideal testbeds for studying nonlinear many-body systems driven far from equilibrium. The classical laser gain picture fails, however, when a high peak intensity optical pulse of duration shorter than the intrinsic carrier scattering time interacts with electrons in the conduction and holes in the valence band, and the non-equilibrium carrier distributions cannot recover during the presence of the exciting pulse. We present the optimization of ultrashort mode-locked pulses in a vertical external cavity surface emitting laser cavity with a saturable absorber mirror by modelling non-equilibrium quantum dynamics of the electron-hole excitations in the semiconductor quantum-well gain and absorber medium via the semiconductor Bloch equations and treating the field propagation at the level of Maxwell’s wave equation. We introduce a systematic design that predicts the generation of stable mode-locked pulses of duration less than twenty femtoseconds. This factor of five improvement is of interest for mode-locking and ultrafast semiconductor dynamics applications.
Original language | English (US) |
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Pages (from-to) | 412-417 |
Number of pages | 6 |
Journal | Optica |
Volume | 4 |
Issue number | 4 |
DOIs | |
State | Published - Apr 20 2017 |
Keywords
- Laser theory
- Mode-locked lasers
- Semiconductor lasers
- Ultrafast lasers
- Vertical emitting lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics