Nitrogen Incorporation in Gate Dielectrics: A Correlation Between Auger Electron Spectroscopy and Surface Charge Analysis Techniques

A. Philipossian; B. Doyle

doi:10.1149/1.2050032

Nitrogen Incorporation in Gate Dielectrics: A Correlation Between Auger Electron Spectroscopy and Surface Charge Analysis Techniques

A. Philipossian, B. Doyle

Chemical and Environmental Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

Original language	English (US)
Pages (from-to)	171-172
Number of pages	2
Journal	Journal of the Electrochemical Society
Volume	142
Issue number	10
DOIs	https://doi.org/10.1149/1.2050032
State	Published - Oct 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Nitrogen Incorporation in Gate Dielectrics: A Correlation Between Auger Electron Spectroscopy and Surface Charge Analysis Techniques",

abstract = "Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.",

author = "A. Philipossian and B. Doyle",

year = "1995",

month = oct,

doi = "10.1149/1.2050032",

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AU - Doyle, B.

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N2 - Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

AB - Thermal oxides are grown under various processing conditions which introduce nitrogen into the gate dielectric. It is shown that the positive charge introduced during these processes, measured by surface charge analysis (SCA), correlates with the amount of nitrogen incorporated in the oxides, measured by Auger electron spectroscopy (AES). It is suggested that the SCA technique offers a simple and cost-effective method of characterizing oxides for their nitrogen content.

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Nitrogen Incorporation in Gate Dielectrics: A Correlation Between Auger Electron Spectroscopy and Surface Charge Analysis Techniques

Abstract

ASJC Scopus subject areas

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