@inproceedings{b62f7bf0061c4b4985d3a9b58c8ea9ef,
title = "New wet cleaning strategies for obtaining highly reliable thin oxides",
abstract = "The effect of metal contamination and silicon surface defects on the gate oxide yield is investigated. The characteristics of various cleaning procedures are studied and correlated with the integrity of thin gate oxides. The standard wet cleaning recipe is optimized and a new cleaning strategy is proposed. Selective contamination experiments in chemicals and on Si-wafers are used to investigate the effect of small amounts of metal contaminants on the gate oxide integrity. It is found that the characteristics of the silicon substrate play a dominant role in this. HF-last processes are investigated and a new wet cleaning strategy is proposed.",
author = "Heyns, {M. M.} and S. Verhaverbeke and M. Meuris and Mertens, {P. W.} and H. Schmidt and M. Kubota and A. Philipossian and K. Dillenbeck and D. Graef and A. Schnegg and {de Blank}, R.",
year = "1993",
language = "English (US)",
isbn = "1558992138",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "35--45",
editor = "Higashi, {Gregg S.} and Irene, {Eugene A.} and Tadahiro Ohmi",
booktitle = "Surface Chemical Cleaning and Passivation for Semiconductor Processing",
note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 13-04-1993 Through 15-04-1993",
}