Near IR absorption in films of silicon containing oxygen

S. O. Sari; P. Hollingsworth Smith; H. Oona

doi:10.1016/0022-3697(78)90110-5

Near IR absorption in films of silicon containing oxygen

S. O. Sari
, P. Hollingsworth Smith
, H. Oona

Lunar and Planetary Lab

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.

Original language	English (US)
Pages (from-to)	957-960
Number of pages	4
Journal	Journal of Physics and Chemistry of Solids
Volume	39
Issue number	9
DOIs	https://doi.org/10.1016/0022-3697(78)90110-5
State	Published - 1978

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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@article{190b6110e2b7404986511b966442b705,

title = "Near IR absorption in films of silicon containing oxygen",

abstract = "A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.",

author = "Sari, \{S. O.\} and Smith, \{P. Hollingsworth\} and H. Oona",

note = "Funding Information: Acknowledgemenls-The authors wish to thank B. 0. Seraphin for comments and are grateful to J. C. Phillips for a discussion on oxygen states in silicon. They also thank H. S. Gurev for help with the sample prepartion. This research has been supported by the Air Force Office of Scientific Research (AFSC), United States Air Force, and the Army Research Otlice, United States Army. and by the U.S. National Science Foundation.",

year = "1978",

doi = "10.1016/0022-3697(78)90110-5",

language = "English (US)",

volume = "39",

pages = "957--960",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd",

number = "9",

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TY - JOUR

T1 - Near IR absorption in films of silicon containing oxygen

AU - Sari, S. O.

AU - Smith, P. Hollingsworth

AU - Oona, H.

N1 - Funding Information: Acknowledgemenls-The authors wish to thank B. 0. Seraphin for comments and are grateful to J. C. Phillips for a discussion on oxygen states in silicon. They also thank H. S. Gurev for help with the sample prepartion. This research has been supported by the Air Force Office of Scientific Research (AFSC), United States Air Force, and the Army Research Otlice, United States Army. and by the U.S. National Science Foundation.

PY - 1978

Y1 - 1978

N2 - A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.

AB - A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.

UR - https://www.scopus.com/pages/publications/0018162137

UR - https://www.scopus.com/pages/publications/0018162137#tab=citedBy

U2 - 10.1016/0022-3697(78)90110-5

DO - 10.1016/0022-3697(78)90110-5

M3 - Article

AN - SCOPUS:0018162137

SN - 0022-3697

VL - 39

SP - 957

EP - 960

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 9

ER -

Near IR absorption in films of silicon containing oxygen

Abstract

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