Abstract
A novel reflectance effect has been used to extract new information about oxygen impurity states in silane-vapor-deposited silicon films. A comparison to IR measurements in crystalline silicon yields a substantial wavelength shift of the characteristic 9-μm oxygen transition and may suggest increased film impurity absorption in comparison to the bulk. By combining these experiments with measurements of film oxygen impurity concentration using X-ray emission spectroscopy, values for the oscillator strengths of the prominent oxygen lines in the near IR can be obtained. Interpretation of these data is given.
Original language | English (US) |
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Pages (from-to) | 957-960 |
Number of pages | 4 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 39 |
Issue number | 9 |
DOIs | |
State | Published - 1978 |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics