Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Christine Muccianti, Adam Alfrey, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Hongyi Yu, Brian J. LeRoy, John R. Schaibley

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

For quantum technologies based on single excitons and spins, the deterministic placement and control of a single exciton is a longstanding goal. MoSe2-WSe2heterostructures host spatially indirect interlayer excitons (IXs) that exhibit highly tunable energies and unique spin-valley physics, making them promising candidates for quantum information processing. Previous IX trapping approaches involving moiré superlattices and nanopillars do not meet the quantum technology requirements of deterministic placement and energy tunability. Here, we use a nanopatterned graphene gate to create a sharply varying electric field in close proximity to a MoSe2-WSe2heterostructure. The dipole interaction between the IX and the electric field creates an ∼20 nm trap. The trapped IXs show the predicted electric-field-dependent energy, saturation at low excitation power, and increased lifetime, all signatures of strong spatial confinement. The demonstrated architecture is a crucial step toward the deterministic trapping of single IXs, which has broad applications to scalable quantum technologies.

Original languageEnglish (US)
Pages (from-to)5641-5647
Number of pages7
JournalNano Letters
Volume21
Issue number13
DOIs
StatePublished - Jul 14 2021

Keywords

  • exciton trapping
  • interlayer excitons
  • nanopatterning
  • transition-metal dichalcogenides
  • van der Waals heterostructures

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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