MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers

T. C. Hasenberg; R. H. Miles; A. R. Kost; L. West; D. H. Chow

MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers

T. C. Hasenberg
, R. H. Miles
, A. R. Kost
, L. West
, D. H. Chow

Research output: Contribution to journal › Conference article › peer-review

Abstract

Improved MWIR MQW laser diodes with Ga_0.75In_0.25Sb/InAs broken-gap superlattice (BGSL) quantum wells are reported. The laser structures employ Ga_0.75In_0.25As_0.22Sb_0.78 barrier layers, and InAs/AlSb superlattice cladding layers. The Ga_0.75In_0.25As_0.22Sb_0.78 barriers yield a type-I MQW with the BGSL active region, confining both electrons and holes, as well as enhancing the optical confinement factor of the structure due to their relatively large refractive index. The thicknesses of the Ga_0.75In_0.25Sb/InAs superlattice constituent layers are varied to tune the emission wavelength of the devices, and a range of laser wavelengths is demonstrated.

Original language	English (US)
Pages (from-to)	161-162
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA Duration: Oct 30 1995 → Nov 2 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{27e3992b1bca4c8c8d5cf566de34e5fe,

title = "MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers",

abstract = "Improved MWIR MQW laser diodes with Ga0.75In0.25Sb/InAs broken-gap superlattice (BGSL) quantum wells are reported. The laser structures employ Ga0.75In0.25As0.22Sb0.78 barrier layers, and InAs/AlSb superlattice cladding layers. The Ga0.75In0.25As0.22Sb0.78 barriers yield a type-I MQW with the BGSL active region, confining both electrons and holes, as well as enhancing the optical confinement factor of the structure due to their relatively large refractive index. The thicknesses of the Ga0.75In0.25Sb/InAs superlattice constituent layers are varied to tune the emission wavelength of the devices, and a range of laser wavelengths is demonstrated.",

author = "Hasenberg, \{T. C.\} and Miles, \{R. H.\} and Kost, \{A. R.\} and L. West and Chow, \{D. H.\}",

year = "1995",

language = "English (US)",

volume = "2",

pages = "161--162",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) ; Conference date: 30-10-1995 Through 02-11-1995",

}

TY - JOUR

T1 - MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers

AU - Hasenberg, T. C.

AU - Miles, R. H.

AU - Kost, A. R.

AU - West, L.

AU - Chow, D. H.

PY - 1995

Y1 - 1995

N2 - Improved MWIR MQW laser diodes with Ga0.75In0.25Sb/InAs broken-gap superlattice (BGSL) quantum wells are reported. The laser structures employ Ga0.75In0.25As0.22Sb0.78 barrier layers, and InAs/AlSb superlattice cladding layers. The Ga0.75In0.25As0.22Sb0.78 barriers yield a type-I MQW with the BGSL active region, confining both electrons and holes, as well as enhancing the optical confinement factor of the structure due to their relatively large refractive index. The thicknesses of the Ga0.75In0.25Sb/InAs superlattice constituent layers are varied to tune the emission wavelength of the devices, and a range of laser wavelengths is demonstrated.

AB - Improved MWIR MQW laser diodes with Ga0.75In0.25Sb/InAs broken-gap superlattice (BGSL) quantum wells are reported. The laser structures employ Ga0.75In0.25As0.22Sb0.78 barrier layers, and InAs/AlSb superlattice cladding layers. The Ga0.75In0.25As0.22Sb0.78 barriers yield a type-I MQW with the BGSL active region, confining both electrons and holes, as well as enhancing the optical confinement factor of the structure due to their relatively large refractive index. The thicknesses of the Ga0.75In0.25Sb/InAs superlattice constituent layers are varied to tune the emission wavelength of the devices, and a range of laser wavelengths is demonstrated.

UR - https://www.scopus.com/pages/publications/0029516205

UR - https://www.scopus.com/pages/publications/0029516205#tab=citedBy

M3 - Conference article

AN - SCOPUS:0029516205

SN - 1092-8081

VL - 2

SP - 161

EP - 162

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2)

Y2 - 30 October 1995 through 2 November 1995

ER -

MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers

Abstract

ASJC Scopus subject areas

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