Abstract
An InAs quantum dot (QD) vertical external cavity surface-emitting laser (VECSEL) operating at a wavelength of 1.25m is reported. The gain region of the laser consists of a resonant periodic gain structure using single QD layers at 12 adjacent electrical field antinodes - a design optimised to reduce strain accumulation and improve QD quality. A fibre-coupled 808nm laser diode is used as a pump source and a spherical external mirror completes the cavity. Thermal management is accomplished by bonding the VECSEL sample to a chemical vapour deposition (CVD) diamond heat spreader. Continuous wave output powers in excess of 3 W have been achieved at room temperature. The broad emission spectrum makes this device an ideal candidate for wavelength tunable or modelocked applications.
Original language | English (US) |
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Pages (from-to) | 856-857 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 46 |
Issue number | 12 |
DOIs | |
State | Published - Jun 10 2010 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering