TY - GEN
T1 - Multi-length scale electro-thermal simulations of GaN high electron mobility transistors
AU - Hao, Qing
AU - Zhao, Hongbo
AU - Xiao, Yue
N1 - Funding Information:
This material is based on research sponsored by Defense Advanced Research Agency (DARPA) under agreement number FA8650-15-1-7523. The U.S. Government is authorized to reproduce and distribute reprints for Governmental purposes notwithstanding any copyright notation thereon.
Publisher Copyright:
© 2016, Dalian University of Technology. All rights reserved.
PY - 2016
Y1 - 2016
N2 - Overheating has largely limited the performance of GaN-based high electron mobility transistors (HEMTs) as high-power and high-frequency electronic devices. In this work, a multi-length scale simulation technique is developed and demonstrated in a 2D GaN-on-SiC HEMT. For the transistor region, coupled electron and phonon Monte Carlo (MC) simulations are used to address the phonon emission by hot electrons and phonon transport within the ~10 μm transistor region. Away from the transistor, conventional Fourier analysis is invoked so that heat transfer across the whole macroscale device can still be considered. Energy-dependent electron and phonon transport, either within a material or across an interface, can be incorporated into the simulation. Beyond 2D HEMTs, this technique can be applied to more complicated 3D devices for accurate prediction of device characteristic.
AB - Overheating has largely limited the performance of GaN-based high electron mobility transistors (HEMTs) as high-power and high-frequency electronic devices. In this work, a multi-length scale simulation technique is developed and demonstrated in a 2D GaN-on-SiC HEMT. For the transistor region, coupled electron and phonon Monte Carlo (MC) simulations are used to address the phonon emission by hot electrons and phonon transport within the ~10 μm transistor region. Away from the transistor, conventional Fourier analysis is invoked so that heat transfer across the whole macroscale device can still be considered. Energy-dependent electron and phonon transport, either within a material or across an interface, can be incorporated into the simulation. Beyond 2D HEMTs, this technique can be applied to more complicated 3D devices for accurate prediction of device characteristic.
KW - Coupled electron and phonon MC simulations
KW - HEMT
KW - Multi-length scale
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M3 - Conference contribution
AN - SCOPUS:85053694729
SN - 9788874314591
SN - 9788874318285
T3 - International Conference on Computational Methods for Thermal Problems
BT - International Conference on Computational Methods for Thermal Problems
A2 - Massarotti, Nicola
A2 - Nithiarasu, Perumal
A2 - Joshi, Yogendra
PB - Dalian University of Technology
T2 - 4th International Conference on Computational Methods for Thermal Problems, THERMACOMP 2016
Y2 - 6 July 2016 through 8 July 2016
ER -