Multi-length scale electro-thermal simulations of GaN high electron mobility transistors

Qing Hao, Hongbo Zhao, Yue Xiao

Research output: Contribution to journalConference articlepeer-review


Overheating has largely limited the performance of GaN-based high electron mobility transistors (HEMTs) as high-power and high-frequency electronic devices. In this work, a multi-length scale simulation technique is developed and demonstrated in a 2D GaN-on-SiC HEMT. For the transistor region, coupled electron and phonon Monte Carlo (MC) simulations are used to address the phonon emission by hot electrons and phonon transport within the ~10 μm transistor region. Away from the transistor, conventional Fourier analysis is invoked so that heat transfer across the whole macroscale device can still be considered. Energy-dependent electron and phonon transport, either within a material or across an interface, can be incorporated into the simulation. Beyond 2D HEMTs, this technique can be applied to more complicated 3D devices for accurate prediction of device characteristic.

Original languageEnglish (US)
JournalInternational Conference on Computational Methods for Thermal Problems
Issue number217349
StatePublished - 2016
Externally publishedYes
Event4th International Conference on Computational Methods for Thermal Problems, THERMACOMP 2016 - Atlanta, United States
Duration: Jul 6 2016Jul 8 2016


  • Coupled electron and phonon MC simulations
  • HEMT
  • Multi-length scale

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Computational Mathematics
  • Numerical Analysis


Dive into the research topics of 'Multi-length scale electro-thermal simulations of GaN high electron mobility transistors'. Together they form a unique fingerprint.

Cite this