Abstract
We present a novel cavity design for vertical external cavity surface emitting lasers (VECSELs) enabling multiple interactions with the gain structure under different angles in a single round trip. This allows for a low round-trip group delay dispersion (GDD) despite using high-gain resonant VECSEL structures possessing pronounced resonances in their reflective GDD profile. Femtosecond-regime pulses with an average output power of 1.14 W and record peak intensities for mode-locked VECSELs of 6.3 kW are presented with simulations demonstrating the GDD compensating mechanism employed in this scheme.
Original language | English (US) |
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Article number | 7807276 |
Pages (from-to) | 326-329 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 29 |
Issue number | 3 |
DOIs | |
State | Published - Feb 1 2017 |
Keywords
- F-Cavity
- VECSEL
- semiconductor lasers
- ultrafast optics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering