Abstract
As part of a program to extend the wavelength response of infrared array technology beyond the cutoff of extrinsic silicon photoconductivity, we have calculated the optimum parameters for a front-illuminated two dimensional array of Ge:Be detectors. Detector arrays to this prescription have been produced by indium bump bonding onto sapphire fanouts. We report a preliminary performance evaluation of these arrays.
Original language | English (US) |
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Pages (from-to) | 78-87 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1946 |
DOIs | |
State | Published - Oct 20 1993 |
Event | Infrared Detectors and Instrumentation 1993 - Orlando, United States Duration: Apr 11 1993 → Apr 16 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering