Monitoring the temperature distribution in high-power VECSELs

S. Chatterjee, A. Chernikov, J. Herrmann, M. Scheller, M. Koch, B. Kunert, W. Stolz, S. W. Koch, T. L. Wang, Y. Kaneda, J. M. Yarborough, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Vertical-external-cavity surface-emitting lasers (VECSELs) have received much attention in the scientific community by accessing a broad spectral range, and enabling efficient intra-cavity frequency mixing [1-3]. They combine the high output power of semiconductor diode lasers with the superior beam quality inherent to surface emitters. The majority of the applications relies on the high output power of the device [4]. Generally, the performance of the VECSEL is limited by overheating. Efficient cooling concepts are therefore inevitable providing distribution and removal of the excess heat. A careful choice of the pump profile is also considered crucial for the optimal output characteristics. Here, we study the impact of the size and spatial fluence distribution of the pump spot on the output power. For this purpose the input-output characteristics of the device is monitored while simultaneously tracking the temperature in the active region.

Original languageEnglish (US)
Title of host publication2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
DOIs
StatePublished - 2011
Event2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany
Duration: May 22 2011May 26 2011

Publication series

Name2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Other

Other2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
Country/TerritoryGermany
CityMunich
Period5/22/115/26/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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