Abstract
In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.
| Original language | English (US) |
|---|---|
| Article number | 065202 |
| Journal | Nanotechnology |
| Volume | 21 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2010 |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
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