Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics

U. K. Khankhoje; S. H. Kim; B. C. Richards; J. Hendrickson; J. Sweet; J. D. Olitzky; G. Khitrova; H. M. Gibbs; A. Scherer

doi:10.1088/0957-4484/21/6/065202

Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics

U. K. Khankhoje, S. H. Kim, B. C. Richards, J. Hendrickson, J. Sweet, J. D. Olitzky, G. Khitrova, H. M. Gibbs, A. Scherer

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

Original language	English (US)
Article number	065202
Journal	Nanotechnology
Volume	21
Issue number	6
DOIs	https://doi.org/10.1088/0957-4484/21/6/065202
State	Published - 2010

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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Cite this

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title = "Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics",

abstract = "In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.",

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AU - Khankhoje, U. K.

AU - Kim, S. H.

AU - Richards, B. C.

AU - Hendrickson, J.

AU - Sweet, J.

AU - Olitzky, J. D.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Scherer, A.

PY - 2010

Y1 - 2010

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AB - In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

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Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics

Abstract

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