Modeling semiconductor lasers: Simulation of devices based on microscopic physics

J. V. Moloney; M. Kolesik; M. Matus; K. J. Kasunic

doi:10.1117/12.391432

Modeling semiconductor lasers: Simulation of devices based on microscopic physics

J. V. Moloney, M. Kolesik, M. Matus, K. J. Kasunic

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.

Original language	English (US)
Pages (from-to)	294-300
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3944 (I)
DOIs	https://doi.org/10.1117/12.391432
State	Published - 2000
Event	Physics and Simulation of Optoelectronic Devices VIII - San Jose, CA, USA Duration: Jan 24 2000 → Jan 28 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.391432

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title = "Modeling semiconductor lasers: Simulation of devices based on microscopic physics",

abstract = "We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.",

author = "Moloney, {J. V.} and M. Kolesik and M. Matus and Kasunic, {K. J.}",

year = "2000",

doi = "10.1117/12.391432",

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AU - Matus, M.

AU - Kasunic, K. J.

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AB - We are currently developing 2 semiconductor laser simulators built on a first-principles microscopic physics basis. The first is a PC-based, plane-wave simulator for both component and system-level design of low-power optoelectronic devices. The second is a supercomputer-based simulator that models the fully time-dependent and spatially-resolved optical, carrier, and temperature fields for arbitrary geometry, high-power semiconductor lasers. Both simulators are based on a comprehensive gain model that includes the relevant bandstructure of the quantum wells and confining barrier regions together with a fully quantum mechanical many-body calculation that takes all occupied bands into account.

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Modeling semiconductor lasers: Simulation of devices based on microscopic physics

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