Modeling semiconductor amplifiers and lasers: From microscopic physics to device simulation

J. V. Moloney; R. A. Indik; J. Hader; S. W. Koch

doi:10.1364/JOSAB.16.002023

Modeling semiconductor amplifiers and lasers: From microscopic physics to device simulation

J. V. Moloney, R. A. Indik, J. Hader, S. W. Koch

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We combine the results of full many-body band-structure calculations of the semiconductor optical response and a full space-time-resolved laser propagation model. Two quantum-well structures are chosen, one showing a sharp increase of the line width enhancement factor with density; the other, a clamping of this factor with increasing density. The average far-field broadening of two weakly turbulent broad-area high-power semiconductor lasers is shown to be quite different for the two structures.

Original language	English (US)
Pages (from-to)	2023-2029
Number of pages	7
Journal	Journal of the Optical Society of America B: Optical Physics
Volume	16
Issue number	11
DOIs	https://doi.org/10.1364/JOSAB.16.002023
State	Published - Nov 1999

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Atomic and Molecular Physics, and Optics

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AU - Hader, J.

AU - Koch, S. W.

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AB - We combine the results of full many-body band-structure calculations of the semiconductor optical response and a full space-time-resolved laser propagation model. Two quantum-well structures are chosen, one showing a sharp increase of the line width enhancement factor with density; the other, a clamping of this factor with increasing density. The average far-field broadening of two weakly turbulent broad-area high-power semiconductor lasers is shown to be quite different for the two structures.

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Modeling semiconductor amplifiers and lasers: From microscopic physics to device simulation

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