Abstract
We present a comparison of experimental and microscopically based model results for optically pumped vertical external cavity surface emitting semiconductor lasers. The quantum well gain model is based on a quantitative ab-initio approach that allows calculation of a complex material susceptibility dependence on the wavelength, carrier density and lattice temperature. The gain model is coupled to the macroscopic thermal transport, spatially resolved in both the radial and longitudinal directions, with temperature and carrier density dependent pump absorption. The radial distribution of the refractive index and gain due to temperature variation are computed. Thermal management issues, highlighted by the experimental data, are discussed. Experimental results indicate a critical dependence of the input power, at which thermal roll-over occurs, on the thermal resistance of the device. This requires minimization of the substrate thickness and optimization of the design and placement of the heatsink. Dependence of the model results on the radiative and non-radiative carrier recombination lifetimes and cavity losses are evaluated.
Original language | English (US) |
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Pages (from-to) | 104-110 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4993 |
DOIs | |
State | Published - 2003 |
Event | High-Power Fiber and Semiconductor Lasers - San Jose, CA, United States Duration: Jan 27 2003 → Jan 27 2003 |
Keywords
- Optically pumped semiconductor disc laser
- VECSEL
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering