Abstract
Ferroelectric (FE) films especially PZT films, have received increasing attention for microelectric applications such as ferroelectric memory and high density DRAM. There has been significant progress in the preparation of high quality PZT films involving wet chemical land physical vapor deposition techniques. Metal-FE-metal structures, typified by Pt-PZT-Pt capacitors, are the basic building blocks for the ferroelectric devices. The leakage currents of the capacitors are known to be non-ohmic and exhibit an exponential dependence on applied voltage.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 415-422 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 310 |
| State | Published - 1993 |
| Externally published | Yes |
| Event | Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 14 1993 → Apr 16 1993 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering