Abstract
GaInSb/InAs superlattices are attractive candidate active layers in mid-wave infrared (MWIR) lasers. The unusual broken gap band alignment in this system allows considerable freedom to tailor the electronic band structure of the conduction and valence bands, making possible appreciable reductions in Auger recombination and intersubband absorption loss mechanisms. This paper report significant improvements in the performance of laser diodes based on these superlattices, arising from improved extrinsic materials properties and better laser design. Active layers are multiple quantum wells consisting of thin Ga0.75In0.25Sb/InAs superlattice quantum wells interleaved between Ga0.75In0.25As0.23Sb0.77 barrier layers. This design was chosen to remove the constraint of lattice match between the GaInSb/InAs superlattices and the substrate, allowing structures with superior intrinsic characteristics to be employed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 172 |
| Number of pages | 1 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering