Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

D. H. Chow; R. H. Miles; T. C. Hasenberg; A. R. Kost; Y. H. Zhang; H. L. Dunlap; L. West

doi:10.1063/1.115354

Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

D. H. Chow
, R. H. Miles
, T. C. Hasenberg
, A. R. Kost
, Y. H. Zhang
, H. L. Dunlap
, L. West

Research output: Contribution to journal › Article › peer-review

97 Scopus citations

Abstract

We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3-5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga_0.75In_0.25As_0.22Sb_0.78 barriers and type-II (broken-gap) Ga_0.75In_0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga _0.75In_0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.

Original language	English (US)
Pages (from-to)	3700
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115354
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.115354

Cite this

@article{9fb9e7a1cd9f4b788e27b7c01ef99003,

title = "Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices",

abstract = "We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3-5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 {\AA} /24 {\AA}) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga 0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.",

author = "Chow, \{D. H.\} and Miles, \{R. H.\} and Hasenberg, \{T. C.\} and Kost, \{A. R.\} and Zhang, \{Y. H.\} and Dunlap, \{H. L.\} and L. West",

year = "1995",

doi = "10.1063/1.115354",

language = "English (US)",

volume = "67",

pages = "3700",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

AU - Chow, D. H.

AU - Miles, R. H.

AU - Hasenberg, T. C.

AU - Kost, A. R.

AU - Zhang, Y. H.

AU - Dunlap, H. L.

AU - West, L.

PY - 1995

Y1 - 1995

N2 - We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3-5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga 0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.

AB - We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3-5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 Å /24 Å) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga 0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained.

UR - https://www.scopus.com/pages/publications/0029483778

UR - https://www.scopus.com/pages/publications/0029483778#tab=citedBy

U2 - 10.1063/1.115354

DO - 10.1063/1.115354

M3 - Article

AN - SCOPUS:0029483778

SN - 0003-6951

VL - 67

SP - 3700

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices

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