@inproceedings{a306fc017dd04682867d86a3fff4ce4b,
title = "Mid-infrared semiconductor lasers with GaInSb/InAs type-II superlattices",
abstract = "We demonstrate midwave infrared (MID-IR) diode lasers that span most of the 3 - 4 μm range. Laser active regions are multiple quantum well (MQW) structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions.",
author = "Kost, {Alan R.} and Chow, {David H.} and Hasenberg, {Tom C.} and Miles, {Richard H.} and L. West",
year = "1995",
doi = "10.1117/12.208460",
language = "English (US)",
isbn = "0819417297",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "271--276",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Laser Diodes and Applications ; Conference date: 08-02-1995 Through 10-02-1995",
}