Mid-infrared semiconductor lasers with GaInSb/InAs type-II superlattices

Alan R. Kost, David H. Chow, Tom C. Hasenberg, Richard H. Miles, L. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


We demonstrate midwave infrared (MID-IR) diode lasers that span most of the 3 - 4 μm range. Laser active regions are multiple quantum well (MQW) structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages6
ISBN (Print)0819417297, 9780819417299
StatePublished - 1995
Externally publishedYes
EventLaser Diodes and Applications - San Jose, CA, USA
Duration: Feb 8 1995Feb 10 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceLaser Diodes and Applications
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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