Microwave intensity and frequency modulation of heteroepitaxial-ridge- overgrown distributed feedback lasers

J. E. Bowers; W. T. Tsang; T. L. Koch; N. A. Olsson; R. A. Logan

doi:10.1063/1.95693

Microwave intensity and frequency modulation of heteroepitaxial-ridge- overgrown distributed feedback lasers

J. E. Bowers, W. T. Tsang, T. L. Koch, N. A. Olsson, R. A. Logan

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The intensity and frequency modulation response of heteroepitaxial-ridge- overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small-signal intensity modulation measurements show a -3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.

Original language	English (US)
Pages (from-to)	233-235
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	3
DOIs	https://doi.org/10.1063/1.95693
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Microwave intensity and frequency modulation of heteroepitaxial-ridge- overgrown distributed feedback lasers",

abstract = "The intensity and frequency modulation response of heteroepitaxial-ridge- overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small-signal intensity modulation measurements show a -3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.",

author = "Bowers, {J. E.} and Tsang, {W. T.} and Koch, {T. L.} and Olsson, {N. A.} and Logan, {R. A.}",

year = "1985",

doi = "10.1063/1.95693",

language = "English (US)",

volume = "46",

pages = "233--235",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Microwave intensity and frequency modulation of heteroepitaxial-ridge- overgrown distributed feedback lasers

AU - Bowers, J. E.

AU - Tsang, W. T.

AU - Koch, T. L.

AU - Olsson, N. A.

AU - Logan, R. A.

PY - 1985

Y1 - 1985

N2 - The intensity and frequency modulation response of heteroepitaxial-ridge- overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small-signal intensity modulation measurements show a -3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.

AB - The intensity and frequency modulation response of heteroepitaxial-ridge- overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small-signal intensity modulation measurements show a -3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.

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Microwave intensity and frequency modulation of heteroepitaxial-ridge- overgrown distributed feedback lasers

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