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Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering

  • W. G. Wang
  • , K. J. Yee
  • , D. H. Kim
  • , K. J. Han
  • , X. R. Wang
  • , C. Ni
  • , T. Moriyama
  • , A. Mathew
  • , R. Opila
  • , T. Zhu
  • , John Q. Xiao

Research output: Contribution to journalArticlepeer-review

Abstract

Chromium doped zinc telluride thin films with various doping concentrations are fabricated by magnetron sputtering. These films are ferromagnetic and the Curie temperature increases with Cr concentration. X-ray diffraction, transmission electron microscopy, and magnetic circular dichroism characterizations show that the films are free of Cr1-x Tex impurities and the ferromagnetism is intrinsic. The transport study shows that the resistivity and magnetoresistance are governed by variable range hopping at low temperatures. A negative magnetoresistance as large as -57% is observed at 5 K. The magnetoresistance and its temperature dependence can be well explained by a model involving an increase in the localization length of carriers with a magnetic field in the hopping region. An anomalous Hall effect is also observed and a possible origin of the sign difference between the anomalous Hall resistance and ordinary Hall resistance is discussed.

Original languageEnglish (US)
Article number155207
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number15
DOIs
StatePublished - Apr 15 2008
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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