Keyphrases
Microstructural Evolution
100%
Defect Density
50%
Buried Oxide
50%
Crystalline Si
25%
Si Layer
25%
Implantation Energy
25%
Oxide Precipitates
25%
Low Voltage Device
25%
Breakdown Field
25%
Low-voltage Electronics
25%
Spectrometry Analysis
25%
Breakdown Voltage
25%
Layer Oxide
25%
Annealing Process
25%
Ultra-low Dose
25%
Oxygen Concentration
25%
Defect Reduction
25%
High Current Density
25%
Oxygen Ion Implantation
25%
Implanter
25%
Large Defects
25%
Engineering
Microstructural Evolution
100%
Defect Density
50%
Breakdown Voltage
25%
Annealing Process
25%
Implanted Sample
25%
High Current Density
25%
Breakdown Field
25%
Oxygen Concentration
25%
Optimum Condition
25%
Oxygen Ion
25%
Material Science
Microstructural Evolution
100%
Defect Density
66%
Secondary Ion Mass Spectrometry
66%