Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

S. Imhof, C. Bückers, A. Thränhardt, J. Hader, J. V. Moloney, S. W. Koch

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

Original languageEnglish (US)
Article number125009
JournalSemiconductor Science and Technology
Issue number12
StatePublished - Dec 1 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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