Microscopic simulation of semiconductor lasers in the GaInNAs material system

A. Thränhardt; C. Schlichenmaier; I. Kuznetsova; S. W. Koch; W. W. Chow; J. Hader; J. V. Moloney

doi:10.1109/NUSOD.2006.306712

Microscopic simulation of semiconductor lasers in the GaInNAs material system

A. Thränhardt, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, W. W. Chow, J. Hader, J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 μm structure are investigated and show no principal degradation as compared to a 1.3 μm structure.

Original language	English (US)
Title of host publication	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages	3-4
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2006.306712
State	Published - 2006
Event	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore Duration: Sep 11 2006 → Sep 14 2006

Publication series

Name	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Other

Other	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Country/Territory	Singapore
City	Nanyang
Period	9/11/06 → 9/14/06

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/NUSOD.2006.306712

Cite this

Thränhardt, A., Schlichenmaier, C., Kuznetsova, I., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2006). Microscopic simulation of semiconductor lasers in the GaInNAs material system. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 (pp. 3-4). [4098752] (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). https://doi.org/10.1109/NUSOD.2006.306712

Microscopic simulation of semiconductor lasers in the GaInNAs material system. / Thränhardt, A.; Schlichenmaier, C.; Kuznetsova, I. et al.
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 3-4 4098752 (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Thränhardt, A, Schlichenmaier, C, Kuznetsova, I, Koch, SW, Chow, WW, Hader, J & Moloney, JV 2006, Microscopic simulation of semiconductor lasers in the GaInNAs material system. in 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06., 4098752, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, pp. 3-4, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, Nanyang, Singapore, 9/11/06. https://doi.org/10.1109/NUSOD.2006.306712

Thränhardt A, Schlichenmaier C, Kuznetsova I, Koch SW, Chow WW, Hader J et al. Microscopic simulation of semiconductor lasers in the GaInNAs material system. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 3-4. 4098752. (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). doi: 10.1109/NUSOD.2006.306712

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abstract = "(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 μm structure are investigated and show no principal degradation as compared to a 1.3 μm structure.",

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AU - Hader, J.

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AB - (GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 μm structure are investigated and show no principal degradation as compared to a 1.3 μm structure.

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Microscopic simulation of semiconductor lasers in the GaInNAs material system

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