Microscopic simulation of semiconductor lasers at telecommunication wavelengths

A. Thränhardt; C. Bückers; C. Schlichenmaier; I. Kuznetsova; S. W. Koch; J. Hader; J. V. Moloney

doi:10.1007/s11082-006-9056-2

Microscopic simulation of semiconductor lasers at telecommunication wavelengths

A. Thränhardt, C. Bückers, C. Schlichenmaier, I. Kuznetsova, S. W. Koch, J. Hader, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.

Original language	English (US)
Pages (from-to)	1005-1009
Number of pages	5
Journal	Optical and Quantum Electronics
Volume	38
Issue number	12-14
DOIs	https://doi.org/10.1007/s11082-006-9056-2
State	Published - Sep 2006

Keywords

Carrier scattering
Dilute nitrides
GaAsSb
Microscopic gain calculation
Quantum well lasers
Telecommunication wavelength

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/s11082-006-9056-2

Cite this

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title = "Microscopic simulation of semiconductor lasers at telecommunication wavelengths",

abstract = "We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.",

keywords = "Carrier scattering, Dilute nitrides, GaAsSb, Microscopic gain calculation, Quantum well lasers, Telecommunication wavelength",

author = "A. Thr{\"a}nhardt and C. B{\"u}ckers and C. Schlichenmaier and I. Kuznetsova and Koch, {S. W.} and J. Hader and Moloney, {J. V.}",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), the senior scientist award of the Humboldt foundation and by AFOSR (F49620-02-1-0380).",

year = "2006",

month = sep,

doi = "10.1007/s11082-006-9056-2",

language = "English (US)",

volume = "38",

pages = "1005--1009",

journal = "Optical and Quantum Electronics",

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T1 - Microscopic simulation of semiconductor lasers at telecommunication wavelengths

AU - Thränhardt, A.

AU - Bückers, C.

AU - Schlichenmaier, C.

AU - Kuznetsova, I.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), the senior scientist award of the Humboldt foundation and by AFOSR (F49620-02-1-0380).

PY - 2006/9

Y1 - 2006/9

N2 - We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.

AB - We consider two GaAs-based laser materials emitting at telecommunication wavelengths, namely the dilute nitride (GaIn)(NAs) as well as Ga(AsSb), and model their optical properties by including scattering and dephasing on a microscopic basis. The theory shows an excellent agreement with experiment without the inclusion of fit parameters such as phenomenological scattering times. By careful comparison of measurements and computations, one can extract controversial bandstructure parameters such as the band offset.

KW - Carrier scattering

KW - Dilute nitrides

KW - GaAsSb

KW - Microscopic gain calculation

KW - Quantum well lasers

KW - Telecommunication wavelength

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DO - 10.1007/s11082-006-9056-2

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SN - 0306-8919

VL - 38

SP - 1005

EP - 1009

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 12-14

ER -

Microscopic simulation of semiconductor lasers at telecommunication wavelengths

Abstract

Keywords

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