Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

P. Ru; J. V. Moloney; R. Indik; S. W. Koch; W. W. Chow

doi:10.1007/BF00430557

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

P. Ru, J. V. Moloney, R. Indik, S. W. Koch, W. W. Chow

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

Original language	English (US)
Pages (from-to)	675-693
Number of pages	19
Journal	Optical and Quantum Electronics
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/BF00430557
State	Published - Oct 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1007/BF00430557

Cite this

@article{c73c501159bd4af29f64775539ee1115,

title = "Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers",

abstract = "The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.",

author = "P. Ru and Moloney, {J. V.} and R. Indik and Koch, {S. W.} and Chow, {W. W.}",

year = "1993",

month = oct,

doi = "10.1007/BF00430557",

language = "English (US)",

volume = "25",

pages = "675--693",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

AU - Ru, P.

AU - Moloney, J. V.

AU - Indik, R.

AU - Koch, S. W.

AU - Chow, W. W.

PY - 1993/10

Y1 - 1993/10

N2 - The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

AB - The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

UR - http://www.scopus.com/inward/record.url?scp=0027681555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027681555&partnerID=8YFLogxK

U2 - 10.1007/BF00430557

DO - 10.1007/BF00430557

M3 - Article

AN - SCOPUS:0027681555

SN - 0306-8919

VL - 25

SP - 675

EP - 693

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 10

ER -

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this