Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

P. Ru; J. V. Moloney; R. Indik; S. W. Koch; W. W. Chow

doi:10.1007/BF00430557

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

P. Ru, J. V. Moloney, R. Indik, S. W. Koch, W. W. Chow

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

Original language	English (US)
Pages (from-to)	675-693
Number of pages	19
Journal	Optical and Quantum Electronics
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/BF00430557
State	Published - Oct 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/BF00430557

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title = "Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers",

abstract = "The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.",

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AU - Ru, P.

AU - Moloney, J. V.

AU - Indik, R.

AU - Koch, S. W.

AU - Chow, W. W.

PY - 1993/10

Y1 - 1993/10

N2 - The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

AB - The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers.

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ER -

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

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