Microscopic modeling of transverse mode instabilities in mode-locked vertical external-cavity surface-emitting lasers

S. McLaren; I. Kilen; J. V. Moloney

doi:10.1063/1.5134070

Microscopic modeling of transverse mode instabilities in mode-locked vertical external-cavity surface-emitting lasers

S. McLaren, I. Kilen, J. V. Moloney

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6 Scopus citations

Abstract

The generation and control of higher order transverse modes within a mode-locked vertical external-cavity surface-emitting laser with a semiconductor saturable absorber mirror are studied using a numerical solver for the two dimensional Maxwell Semiconductor Bloch Equations. In this work, the complex spatiotemporal evolution of the pulse toward a mode-locked state depends sensitively on the pumping level and pump to pulse spot size ratio. Microscopic physics sourced effects such as kinetic hole burning and filling, occurring on femtosecond timescales, play a central role. In particular, unsaturated charge carriers, both spectrally and transversally, initiate the development of asymmetric pulse profiles that transform over various characteristic time scales in a carrier chasing behavior.

Original language	English (US)
Article number	031102
Journal	Applied Physics Letters
Volume	116
Issue number	3
DOIs	https://doi.org/10.1063/1.5134070
State	Published - Jan 21 2020

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The generation and control of higher order transverse modes within a mode-locked vertical external-cavity surface-emitting laser with a semiconductor saturable absorber mirror are studied using a numerical solver for the two dimensional Maxwell Semiconductor Bloch Equations. In this work, the complex spatiotemporal evolution of the pulse toward a mode-locked state depends sensitively on the pumping level and pump to pulse spot size ratio. Microscopic physics sourced effects such as kinetic hole burning and filling, occurring on femtosecond timescales, play a central role. In particular, unsaturated charge carriers, both spectrally and transversally, initiate the development of asymmetric pulse profiles that transform over various characteristic time scales in a carrier chasing behavior.",

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AB - The generation and control of higher order transverse modes within a mode-locked vertical external-cavity surface-emitting laser with a semiconductor saturable absorber mirror are studied using a numerical solver for the two dimensional Maxwell Semiconductor Bloch Equations. In this work, the complex spatiotemporal evolution of the pulse toward a mode-locked state depends sensitively on the pumping level and pump to pulse spot size ratio. Microscopic physics sourced effects such as kinetic hole burning and filling, occurring on femtosecond timescales, play a central role. In particular, unsaturated charge carriers, both spectrally and transversally, initiate the development of asymmetric pulse profiles that transform over various characteristic time scales in a carrier chasing behavior.

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Microscopic modeling of transverse mode instabilities in mode-locked vertical external-cavity surface-emitting lasers

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