Microscopic modeling of quantum well gain media for VECSEL applications

Christina Bückers, Sebastian Imhof, Angela Thränhardt, Jörg Hader, Jerome V. Moloney, Stephan W Koch

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


This paper summarizes a consistent microscopic approach that allows for predictive calculations of laser gain/absorption, photoluminescence, and the intrinsic laser loss processes. The theory is first evaluated for an (AlGaIn)As quantum well system used in a vertical-external-cavity surface-emitting laser structure. Good agreement with experimental results is demonstrated. In a second application, the microscopic approach is used to predict the optical properties of novel dilute bismide containing GaAs-based quantum well gain media. Modeling the bismuth-induced band structure modifications by a valence band anticrossing model, the material gain, radiative, and Auger losses are computed.

Original languageEnglish (US)
Article number4781541
Pages (from-to)984-992
Number of pages9
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number3
StatePublished - May 2009


  • Dilute bismide III-V compounds
  • Microscopic laser modeling
  • Quantum well systems
  • Semiconductor gain materials
  • Valence band anticrossing

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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