TY - JOUR
T1 - Microscopic modeling of quantum well gain media for VECSEL applications
AU - Bückers, Christina
AU - Imhof, Sebastian
AU - Thränhardt, Angela
AU - Hader, Jörg
AU - Moloney, Jerome V.
AU - Koch, Stephan W.
N1 - Funding Information:
Manuscript received October 31, 2008; revised December 8, 2008. First published February 10, 2009; current version published June 5, 2009. This work was supported by the Deutsche Forschungsgemeinschaft through the research group on “Metastable compound semiconductor systems and heterostructures,” by the Air Force Office of Scientific Research (AFOSR) (FA9550-06-C-0044, FA9550-07-1-0573 JTO MRI), and by the Senior Scientist Award of the Humboldt Foundation.
PY - 2009/5
Y1 - 2009/5
N2 - This paper summarizes a consistent microscopic approach that allows for predictive calculations of laser gain/absorption, photoluminescence, and the intrinsic laser loss processes. The theory is first evaluated for an (AlGaIn)As quantum well system used in a vertical-external-cavity surface-emitting laser structure. Good agreement with experimental results is demonstrated. In a second application, the microscopic approach is used to predict the optical properties of novel dilute bismide containing GaAs-based quantum well gain media. Modeling the bismuth-induced band structure modifications by a valence band anticrossing model, the material gain, radiative, and Auger losses are computed.
AB - This paper summarizes a consistent microscopic approach that allows for predictive calculations of laser gain/absorption, photoluminescence, and the intrinsic laser loss processes. The theory is first evaluated for an (AlGaIn)As quantum well system used in a vertical-external-cavity surface-emitting laser structure. Good agreement with experimental results is demonstrated. In a second application, the microscopic approach is used to predict the optical properties of novel dilute bismide containing GaAs-based quantum well gain media. Modeling the bismuth-induced band structure modifications by a valence band anticrossing model, the material gain, radiative, and Auger losses are computed.
KW - Dilute bismide III-V compounds
KW - Microscopic laser modeling
KW - Quantum well systems
KW - Semiconductor gain materials
KW - Valence band anticrossing
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U2 - 10.1109/JSTQE.2008.2012264
DO - 10.1109/JSTQE.2008.2012264
M3 - Article
AN - SCOPUS:67650886202
SN - 1077-260X
VL - 15
SP - 984
EP - 992
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 3
M1 - 4781541
ER -