Microscopic modeling of GaInNAs semiconductor lasers

Jörg Hader; Jerome V. Moloney; Eoin P. O’Reilly; Martin R. Hofmann; Stephan W. Koch

doi:10.1117/12.432581

Microscopic modeling of GaInNAs semiconductor lasers

Jörg Hader, Jerome V. Moloney, Eoin P. O’Reilly, Martin R. Hofmann, Stephan W. Koch

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We calculate microscopically important material properties for a GaInNAs/GaAs quantum-well laser operating in the 1.3 μm wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger material gain and differential gain and lower linewidth enhancement factors than for the later two material systems.

Original language	English (US)
Pages (from-to)	36-45
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4283
Issue number	1
DOIs	https://doi.org/10.1117/12.432581
State	Published - Jul 9 2001

Keywords

Absorption
Carrier capture time
GaInNAs
Gain
InGaAlAs
InGaAsP
Linewidth enhancement factor
Semiconductor laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.432581

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title = "Microscopic modeling of GaInNAs semiconductor lasers",

abstract = "We calculate microscopically important material properties for a GaInNAs/GaAs quantum-well laser operating in the 1.3 μm wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger material gain and differential gain and lower linewidth enhancement factors than for the later two material systems.",

keywords = "Absorption, Carrier capture time, GaInNAs, Gain, InGaAlAs, InGaAsP, Linewidth enhancement factor, Semiconductor laser",

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T1 - Microscopic modeling of GaInNAs semiconductor lasers

AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - O’Reilly, Eoin P.

AU - Hofmann, Martin R.

AU - Koch, Stephan W.

PY - 2001/7/9

Y1 - 2001/7/9

N2 - We calculate microscopically important material properties for a GaInNAs/GaAs quantum-well laser operating in the 1.3 μm wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger material gain and differential gain and lower linewidth enhancement factors than for the later two material systems.

AB - We calculate microscopically important material properties for a GaInNAs/GaAs quantum-well laser operating in the 1.3 μm wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger material gain and differential gain and lower linewidth enhancement factors than for the later two material systems.

KW - Absorption

KW - Carrier capture time

KW - GaInNAs

KW - Gain

KW - InGaAlAs

KW - InGaAsP

KW - Linewidth enhancement factor

KW - Semiconductor laser

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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Microscopic modeling of GaInNAs semiconductor lasers

Abstract

Keywords

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