Microscopic Modeling of Gain and Luminescence in Semiconductor

Jörg Hader; Jerome V. Moloney; Stephan W. Koch; Weng W. Chow

doi:10.1109/JSTQE.2003.818342

Microscopic Modeling of Gain and Luminescence in Semiconductor

Jörg Hader, Jerome V. Moloney, Stephan W. Koch, Weng W. Chow

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

Original language	English (US)
Pages (from-to)	688-697
Number of pages	10
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	9
Issue number	3
DOIs	https://doi.org/10.1109/JSTQE.2003.818342
State	Published - May 2003

Keywords

Absorption
Gain
Gain measurement
Modeling
Photo luminescence (PL)
Quantum-well lasers

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2003.818342

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title = "Microscopic Modeling of Gain and Luminescence in Semiconductor",

abstract = "The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.",

keywords = "Absorption, Gain, Gain measurement, Modeling, Photo luminescence (PL), Quantum-well lasers",

author = "J{\"o}rg Hader and Moloney, {Jerome V.} and Koch, {Stephan W.} and Chow, {Weng W.}",

note = "Funding Information: Manuscript received December 23, 2002; revised May 19, 2003. This work was supported in part by the U.S. Air Force Office of Scientific Research under Contract F49620-00-1-0002 and under Contract F49620-02-1-0380, in part by the Max-Planck Research Prize of the Max-Planck Society and the Humboldt Foundation, and in part by the U.S. Department of Energy under Contract DEAC04-94AL85000.",

year = "2003",

month = may,

doi = "10.1109/JSTQE.2003.818342",

language = "English (US)",

volume = "9",

pages = "688--697",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Microscopic Modeling of Gain and Luminescence in Semiconductor

AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Koch, Stephan W.

AU - Chow, Weng W.

N1 - Funding Information: Manuscript received December 23, 2002; revised May 19, 2003. This work was supported in part by the U.S. Air Force Office of Scientific Research under Contract F49620-00-1-0002 and under Contract F49620-02-1-0380, in part by the Max-Planck Research Prize of the Max-Planck Society and the Humboldt Foundation, and in part by the U.S. Department of Energy under Contract DEAC04-94AL85000.

PY - 2003/5

Y1 - 2003/5

N2 - The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

AB - The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

KW - Absorption

KW - Gain

KW - Gain measurement

KW - Modeling

KW - Photo luminescence (PL)

KW - Quantum-well lasers

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DO - 10.1109/JSTQE.2003.818342

M3 - Article

AN - SCOPUS:0344092123

SN - 1077-260X

VL - 9

SP - 688

EP - 697

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 3

ER -

Microscopic Modeling of Gain and Luminescence in Semiconductor

Abstract

Keywords

ASJC Scopus subject areas

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