Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

Jörg Hader; Jerome V. Moloney; Stephan W. Koch

doi:10.1109/JQE.2005.854127

Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

Jörg Hader, Jerome V. Moloney, Stephan W. Koch

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95 Scopus citations

Abstract

A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

Original language	English (US)
Pages (from-to)	1217-1226
Number of pages	10
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/JQE.2005.854127
State	Published - Oct 2005

Keywords

Auger recombination
GaInNAs
Gain
InGaAsP
Modeling
Quantum-well lasers
Spontaneous emission

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2005.854127

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title = "Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers",

abstract = "A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.",

keywords = "Auger recombination, GaInNAs, Gain, InGaAsP, Modeling, Quantum-well lasers, Spontaneous emission",

author = "J{\"o}rg Hader and Moloney, {Jerome V.} and Koch, {Stephan W.}",

note = "Funding Information: Manuscript received March 21, 2005; revised May 31, 2005. This work was supported by the U.S. Air Force Office of Scientific Research under Contract F49620-02-1-0380 and in part by the Deutsche Forschungsgemeinschaft. J. Hader and J. V. Moloney are with the Optical Sciences Center, University of Arizona, Tucson, AZ 85721 USA (e-mail: [email protected]). S. W. Koch is with the Department of Physics and Material Sciences Center, Philipps Universit{\"a}t Marburg, 35032 Marburg, Germany. Digital Object Identifier 10.1109/JQE.2005.854127",

year = "2005",

month = oct,

doi = "10.1109/JQE.2005.854127",

language = "English (US)",

volume = "41",

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journal = "IEEE Journal of Quantum Electronics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Koch, Stephan W.

N1 - Funding Information: Manuscript received March 21, 2005; revised May 31, 2005. This work was supported by the U.S. Air Force Office of Scientific Research under Contract F49620-02-1-0380 and in part by the Deutsche Forschungsgemeinschaft. J. Hader and J. V. Moloney are with the Optical Sciences Center, University of Arizona, Tucson, AZ 85721 USA (e-mail: [email protected]). S. W. Koch is with the Department of Physics and Material Sciences Center, Philipps Universität Marburg, 35032 Marburg, Germany. Digital Object Identifier 10.1109/JQE.2005.854127

PY - 2005/10

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N2 - A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

AB - A fully microscopic approach is used to compute the losses in semiconductor lasers due to spontaneous emission and Auger recombination. The model is based on the semiconductor-Bloch equations and generalized quantum-Boltzmann type scattering equations in the second Born-Markov approximation. As input the theory only needs the structural layout and fundamental bulk-bandstructure parameters. It is demonstrated that such a comprehensive model that calculates gain/ absorption, spontaneous emission and Auger processes on the same microscopic level can reliably predict these usually dominant loss processes. Examples of the results are compared to measurements on lasers in the 1.3-1.5 μm range demonstrating very good agreement without empirical fitting.

KW - Auger recombination

KW - GaInNAs

KW - Gain

KW - InGaAsP

KW - Modeling

KW - Quantum-well lasers

KW - Spontaneous emission

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JO - IEEE Journal of Quantum Electronics

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Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers

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Keywords

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