Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure

C. Bückers; A. Thränhardt; S. W. Koch; M. Rattunde; N. Schulz; J. Wagner; J. Hader; J. V. Moloney

doi:10.1063/1.2883952

Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure

C. Bückers, A. Thränhardt, S. W. Koch, M. Rattunde, N. Schulz, J. Wagner, J. Hader, J. V. Moloney

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19 Scopus citations

Abstract

A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb structure are presented. For a given excitation density, the gain in the (GaIn)Sb material system considerably exceeds that of a comparable equivalent (GaIn) AsGaAs structure. The physical reasons for this high gain are analyzed and attributed mostly to band structure effects.

Original language	English (US)
Article number	071107
Journal	Applied Physics Letters
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.2883952
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure",

abstract = "A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb structure are presented. For a given excitation density, the gain in the (GaIn)Sb material system considerably exceeds that of a comparable equivalent (GaIn) AsGaAs structure. The physical reasons for this high gain are analyzed and attributed mostly to band structure effects.",

author = "C. B{\"u}ckers and A. Thr{\"a}nhardt and Koch, {S. W.} and M. Rattunde and N. Schulz and J. Wagner and J. Hader and Moloney, {J. V.}",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), AFOSR (FA9550-07-1-0573 JTO MRI), and the senior scientist award of the Humboldt foundation.",

year = "2008",

doi = "10.1063/1.2883952",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure

AU - Bückers, C.

AU - Thränhardt, A.

AU - Koch, S. W.

AU - Rattunde, M.

AU - Schulz, N.

AU - Wagner, J.

AU - Hader, J.

AU - Moloney, J. V.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), AFOSR (FA9550-07-1-0573 JTO MRI), and the senior scientist award of the Humboldt foundation.

PY - 2008

Y1 - 2008

N2 - A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb structure are presented. For a given excitation density, the gain in the (GaIn)Sb material system considerably exceeds that of a comparable equivalent (GaIn) AsGaAs structure. The physical reasons for this high gain are analyzed and attributed mostly to band structure effects.

AB - A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb structure are presented. For a given excitation density, the gain in the (GaIn)Sb material system considerably exceeds that of a comparable equivalent (GaIn) AsGaAs structure. The physical reasons for this high gain are analyzed and attributed mostly to band structure effects.

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U2 - 10.1063/1.2883952

DO - 10.1063/1.2883952

M3 - Article

AN - SCOPUS:39749086516

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071107

ER -

Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure

Abstract

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