Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Mingxiang Wang; Wan Lap Yeung; Yitshak Zohar; Man Wong

Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Mingxiang Wang, Wan Lap Yeung, Yitshak Zohar, Man Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied. A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

Original language	English (US)
Title of host publication	Micro-Electro-Mechanical Systems (MEMS) - 2001
Editors	A.L. Lee, J. Simon, K. Breuer, S. Chen, R.S. Keynton, A. Malshe, J.-I. Mou, M. Dunn
Pages	345-349
Number of pages	5
State	Published - 2001
Externally published	Yes
Event	2001 ASME International Mechanical Engineering Congress and Exposition - New York, NY, United States Duration: Nov 11 2001 → Nov 16 2001

Publication series

Name	American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS)
Volume	3

Other

Other	2001 ASME International Mechanical Engineering Congress and Exposition
Country/Territory	United States
City	New York, NY
Period	11/11/01 → 11/16/01

ASJC Scopus subject areas

General Engineering

Cite this

Wang, M., Yeung, W. L., Zohar, Y., & Wong, M. (2001). Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. In A. L. Lee, J. Simon, K. Breuer, S. Chen, R. S. Keynton, A. Malshe, J.-I. Mou, & M. Dunn (Eds.), Micro-Electro-Mechanical Systems (MEMS) - 2001 (pp. 345-349). (American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS); Vol. 3).

Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. / Wang, Mingxiang; Yeung, Wan Lap; Zohar, Yitshak et al.
Micro-Electro-Mechanical Systems (MEMS) - 2001. ed. / A.L. Lee; J. Simon; K. Breuer; S. Chen; R.S. Keynton; A. Malshe; J.-I. Mou; M. Dunn. 2001. p. 345-349 (American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS); Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, M, Yeung, WL, Zohar, Y & Wong, M 2001, Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. in AL Lee, J Simon, K Breuer, S Chen, RS Keynton, A Malshe, J-I Mou & M Dunn (eds), Micro-Electro-Mechanical Systems (MEMS) - 2001. American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS), vol. 3, pp. 345-349, 2001 ASME International Mechanical Engineering Congress and Exposition, New York, NY, United States, 11/11/01.

Wang M, Yeung WL, Zohar Y, Wong M. Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. In Lee AL, Simon J, Breuer K, Chen S, Keynton RS, Malshe A, Mou JI, Dunn M, editors, Micro-Electro-Mechanical Systems (MEMS) - 2001. 2001. p. 345-349. (American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS)).

Wang, Mingxiang ; Yeung, Wan Lap ; Zohar, Yitshak et al. / Metal-induced laterally crystallized polycrystalline silicon for micro-systems : Mechanical and etching characteristics. Micro-Electro-Mechanical Systems (MEMS) - 2001. editor / A.L. Lee ; J. Simon ; K. Breuer ; S. Chen ; R.S. Keynton ; A. Malshe ; J.-I. Mou ; M. Dunn. 2001. pp. 345-349 (American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS)).

@inproceedings{a036c266d8e44027ae71bdd65ae80a74,

title = "Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics",

abstract = "It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied. A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.",

author = "Mingxiang Wang and Yeung, {Wan Lap} and Yitshak Zohar and Man Wong",

year = "2001",

language = "English (US)",

isbn = "0791835553",

series = "American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS)",

pages = "345--349",

editor = "A.L. Lee and J. Simon and K. Breuer and S. Chen and R.S. Keynton and A. Malshe and J.-I. Mou and M. Dunn",

booktitle = "Micro-Electro-Mechanical Systems (MEMS) - 2001",

note = "2001 ASME International Mechanical Engineering Congress and Exposition ; Conference date: 11-11-2001 Through 16-11-2001",

}

TY - GEN

T1 - Metal-induced laterally crystallized polycrystalline silicon for micro-systems

T2 - 2001 ASME International Mechanical Engineering Congress and Exposition

AU - Wang, Mingxiang

AU - Yeung, Wan Lap

AU - Zohar, Yitshak

AU - Wong, Man

PY - 2001

Y1 - 2001

N2 - It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied. A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

AB - It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied. A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

UR - http://www.scopus.com/inward/record.url?scp=1542537603&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542537603&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:1542537603

SN - 0791835553

T3 - American Society of Mechanical Engineers, Micro-Electromechanical Systems Division Publication (MEMS)

SP - 345

EP - 349

BT - Micro-Electro-Mechanical Systems (MEMS) - 2001

A2 - Lee, A.L.

A2 - Simon, J.

A2 - Breuer, K.

A2 - Chen, S.

A2 - Keynton, R.S.

A2 - Malshe, A.

A2 - Mou, J.-I.

A2 - Dunn, M.

Y2 - 11 November 2001 through 16 November 2001

ER -

Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this