Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Mingxiang Wang; Wan Lap Yeung; Yitshak Zohar; Man Wong

Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Mingxiang Wang, Wan Lap Yeung, Yitshak Zohar, Man Wong

Research output: Contribution to conference › Paper › peer-review

Abstract

It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied, A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

Original language	English (US)
Pages	2919-2923
Number of pages	5
State	Published - 2001
Externally published	Yes
Event	2001 ASME International Mechanical Engineering Congress and Exposition - New York, NY, United States Duration: Nov 11 2001 → Nov 16 2001

Other

Other	2001 ASME International Mechanical Engineering Congress and Exposition
Country/Territory	United States
City	New York, NY
Period	11/11/01 → 11/16/01

ASJC Scopus subject areas

General Engineering

Cite this

Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics. / Wang, Mingxiang; Yeung, Wan Lap; Zohar, Yitshak et al.
2001. 2919-2923 Paper presented at 2001 ASME International Mechanical Engineering Congress and Exposition, New York, NY, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics",

abstract = "It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied, A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.",

author = "Mingxiang Wang and Yeung, {Wan Lap} and Yitshak Zohar and Man Wong",

year = "2001",

language = "English (US)",

pages = "2919--2923",

note = "2001 ASME International Mechanical Engineering Congress and Exposition ; Conference date: 11-11-2001 Through 16-11-2001",

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T1 - Metal-induced laterally crystallized polycrystalline silicon for micro-systems

T2 - 2001 ASME International Mechanical Engineering Congress and Exposition

AU - Wang, Mingxiang

AU - Yeung, Wan Lap

AU - Zohar, Yitshak

AU - Wong, Man

PY - 2001

Y1 - 2001

N2 - It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied, A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

AB - It is determined that for metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si), the mechanical and etch properties compare favorably with and the sensing and electrical properties are better than those of conventional low-pressure chemical vapor deposited (LPCVD) poly-Si. The etching characteristics of MILC poly-Si in tetra-methyl ammonium hydroxide (TMAH) solution have been studied, A unified model based on preferential grain boundary (GB) etching has been proposed to explain the etching behavior of poly-Si in TMAH.

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UR - http://www.scopus.com/inward/citedby.url?scp=1542411498&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1542411498

SP - 2919

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Y2 - 11 November 2001 through 16 November 2001

ER -

Metal-induced laterally crystallized polycrystalline silicon for micro-systems: Mechanical and etching characteristics

Abstract

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ASJC Scopus subject areas

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