Metal Based Nonvolatile Field-Effect Transistors

Chong Bi; Meng Xu; Hamid Almasi; Macus Rosales; Weigang Wang

doi:10.1002/adfm.201600048

Metal Based Nonvolatile Field-Effect Transistors

Chong Bi, Meng Xu, Hamid Almasi, Macus Rosales, Weigang Wang

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field-effect transistor (FET) structure, the redox reaction between Co metal and CoO_x is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 10⁵. Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal-oxide transition may also be used for other energy storage applications.

Original language	English (US)
Pages (from-to)	3490-3495
Number of pages	6
Journal	Advanced Functional Materials
Volume	26
Issue number	20
DOIs	https://doi.org/10.1002/adfm.201600048
State	Published - May 24 2016

Keywords

metal-oxide transition
nonvolatile transistors
redox reaction
resistive memory
solid electrochemical reactions

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1002/adfm.201600048

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title = "Metal Based Nonvolatile Field-Effect Transistors",

abstract = "The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field-effect transistor (FET) structure, the redox reaction between Co metal and CoOx is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 105. Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal-oxide transition may also be used for other energy storage applications.",

keywords = "metal-oxide transition, nonvolatile transistors, redox reaction, resistive memory, solid electrochemical reactions",

author = "Chong Bi and Meng Xu and Hamid Almasi and Macus Rosales and Weigang Wang",

note = "Funding Information: This work was supported by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by National Science Foundation (ECCS-1310338). Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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doi = "10.1002/adfm.201600048",

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T1 - Metal Based Nonvolatile Field-Effect Transistors

AU - Bi, Chong

AU - Xu, Meng

AU - Almasi, Hamid

AU - Rosales, Macus

AU - Wang, Weigang

N1 - Funding Information: This work was supported by C-SPIN, one of the six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and by National Science Foundation (ECCS-1310338). Publisher Copyright: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PY - 2016/5/24

Y1 - 2016/5/24

N2 - The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field-effect transistor (FET) structure, the redox reaction between Co metal and CoOx is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 105. Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal-oxide transition may also be used for other energy storage applications.

AB - The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field-effect transistor (FET) structure, the redox reaction between Co metal and CoOx is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 105. Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal-oxide transition may also be used for other energy storage applications.

KW - metal-oxide transition

KW - nonvolatile transistors

KW - redox reaction

KW - resistive memory

KW - solid electrochemical reactions

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JF - Advanced Functional Materials

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Metal Based Nonvolatile Field-Effect Transistors

Abstract

Keywords

ASJC Scopus subject areas

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