Abstract
Extraordinary Magnetoresistance devices with critical dimensions below 50 nm have been developed in InAs 2-D electron gas (2DEG) quantum well heterostructures, and show the same magnetic sensitivity as Giant Magnetoresistance magnetic recording sensors. A new device design, in which fingers of metal extend into the semiconductor mesa to form leads, yields higher signal and operating currents than the more conventional design with semiconductor tab contacts. Devices built with the 2DEG very close to the surface yield high-signal and high-current carrying capacity, as required for scanning probe and magnetic recording applications.
Original language | English (US) |
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Pages (from-to) | 117-119 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 2 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |
Keywords
- 2-D electron gas (2DEG)
- Extraordinary magnetoresistance (EMR)
- InAs
- Magnetic sensor
- Recording head
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering