Mechanistic study of the deposition of metals from HF solutions onto silicon wafers

H. G. Parks, J. B. Hiskey, K. Yoneshige

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Process chemicals in use today are quite pure, depending on the grade used but can easily be contaminated with metal ions through improper handling or storage techniques. Such metal impurities, if deposited on wafer surfaces during processing can increase reverse-bias junction leakage, degrade oxide breakdown strength and increase metal oxide semiconductor capacitor leakage which in turn can adversely affect the function of ultra large scale integrated (ULSI) circuits. Because of these device effects and since metal contamination can come form several sources it is important to know the deposition level and mechanism on Si wafers from a given process solution. HF based process solution have been investigated due to their historical use in patterning, etching, and their increased use in advanced wafer cleaning processes.

Original languageEnglish (US)
Title of host publicationInterface Control of Electrical, Chemical, and Mechanical Properties
EditorsPeter Borgesen, Klavs F. Jensen, Roger A. Pollak
PublisherPubl by Materials Research Society
Number of pages12
ISBN (Print)1558992170
StatePublished - 1994
EventProceedings of the Fall 1993 MRS Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Fall 1993 MRS Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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