Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

S. Pau; J. Kuhl; F. Scholz; V. Haerle; M. A. Khan; C. J. Sun

doi:10.1063/1.120757

Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

S. Pau, J. Kuhl, F. Scholz, V. Haerle, M. A. Khan, C. J. Sun

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

Original language	English (US)
Pages (from-to)	557-559
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	5
DOIs	https://doi.org/10.1063/1.120757
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120757

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title = "Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing",

abstract = "The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.",

author = "S. Pau and J. Kuhl and F. Scholz and V. Haerle and Khan, {M. A.} and Sun, {C. J.}",

year = "1998",

doi = "10.1063/1.120757",

language = "English (US)",

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pages = "557--559",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

AU - Pau, S.

AU - Kuhl, J.

AU - Scholz, F.

AU - Haerle, V.

AU - Khan, M. A.

AU - Sun, C. J.

PY - 1998

Y1 - 1998

N2 - The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

AB - The density and temperature dependence of the exciton dephasing time of two hexagonal GaN films on sapphire is measured using degenerate four-wave mixing (DFWM). The residual 4 ps dephasing time at low temperature and density is caused by exciton-impurity scattering. We present a theory of DFWM for various amount of inhomogeneous broadening. Good agreement of the temperature dependence of the dephasing time is found between theory and experiment.

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DO - 10.1063/1.120757

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Measurement of phonon-exciton dephasing rate in GaN on sapphire by degenerate four-wave mixing

Abstract

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