MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

G. Khitrova; T. Iwabuchi; H. M. Gibbs

doi:10.1016/0749-6036(90)90347-A

MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

G. Khitrova, T. Iwabuchi, H. M. Gibbs

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.

Original language	English (US)
Pages (from-to)	439-441
Number of pages	3
Journal	Superlattices and Microstructures
Volume	8
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(90)90347-A
State	Published - 1990

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(90)90347-A

Cite this

@article{699d4e412e3a483299b2d8fbe9a1e83b,

title = "MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm",

abstract = "GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.",

author = "G. Khitrova and T. Iwabuchi and Gibbs, {H. M.}",

year = "1990",

doi = "10.1016/0749-6036(90)90347-A",

language = "English (US)",

volume = "8",

pages = "439--441",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

AU - Khitrova, G.

AU - Iwabuchi, T.

AU - Gibbs, H. M.

PY - 1990

Y1 - 1990

N2 - GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.

AB - GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.

UR - http://www.scopus.com/inward/record.url?scp=44949267218&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949267218&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(90)90347-A

DO - 10.1016/0749-6036(90)90347-A

M3 - Article

AN - SCOPUS:44949267218

SN - 0749-6036

VL - 8

SP - 439

EP - 441

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

Abstract

ASJC Scopus subject areas

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