Abstract
GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.
Original language | English (US) |
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Pages (from-to) | 439-441 |
Number of pages | 3 |
Journal | Superlattices and Microstructures |
Volume | 8 |
Issue number | 4 |
DOIs | |
State | Published - 1990 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering