Materials for mid-infrared semiconductor lasers

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A variety of semiconductor materials have been used to fabricate diode lasers for the mid-infrared. Lasers using the lead salts (e.g. PbSnTe) have been commercially available for some time. Mid-infrared emitting III-V semiconductors (e.g. InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these materials offer higher powers. Of particular interest are the III-V semiconductor lasers based on type-II superlattices (e.g. InAs/GaInSb). Among the many unique properties attributed to type-II superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption - all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.

Original languageEnglish (US)
Pages (from-to)3-10
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume484
DOIs
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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