Material removal and particulate generation during abrasion of copper films using a fixed abrasive pad

Wayne H. Huang; Subramanian Tamilmani; Creighton Anderson; Srini Raghavan

doi:10.1109/TSM.2004.835699

Material removal and particulate generation during abrasion of copper films using a fixed abrasive pad

Wayne H. Huang, Subramanian Tamilmani, Creighton Anderson, Srini Raghavan

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Minimization of particulates levels during the chemical-mechanical planarization (CMP) process as well as in the waste streams is possible through the use of a fixed abrasive pad (FAP). The abrasion of electrodeposited copper films using an alumina-based FAP was studied in hydrogen peroxide and hydroxylamine-based chemistries. The removal rate of copper in hydrogen peroxide solutions was much lower than that in hydroxylamine-based solutions in the pH range of 3 to 9. The addition of citrate to peroxide solution enhances the removal rate of copper to a level that is comparable to removal rates in hydroxylamine-based solutions. Abrasion in a hydrogen peroxide solution resulted in the formation of copper and aluminum-based particulates in the solution. The addition of citrate to peroxide solutions reduced the generation of copper-based particulates that were generated in solution. In hydroxylamine-based solutions, particulate generation was minimal.

Original language	English (US)
Pages (from-to)	525-530
Number of pages	6
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/TSM.2004.835699
State	Published - Nov 2004
Externally published	Yes

Keywords

Abrasive-free chemistries
Citric acid
Copper chemical-mechanical polishing (CMP)
Fixed abrasive pad
Hydrogen peroxide
Hydroxylamine

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2004.835699

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title = "Material removal and particulate generation during abrasion of copper films using a fixed abrasive pad",

abstract = "Minimization of particulates levels during the chemical-mechanical planarization (CMP) process as well as in the waste streams is possible through the use of a fixed abrasive pad (FAP). The abrasion of electrodeposited copper films using an alumina-based FAP was studied in hydrogen peroxide and hydroxylamine-based chemistries. The removal rate of copper in hydrogen peroxide solutions was much lower than that in hydroxylamine-based solutions in the pH range of 3 to 9. The addition of citrate to peroxide solution enhances the removal rate of copper to a level that is comparable to removal rates in hydroxylamine-based solutions. Abrasion in a hydrogen peroxide solution resulted in the formation of copper and aluminum-based particulates in the solution. The addition of citrate to peroxide solutions reduced the generation of copper-based particulates that were generated in solution. In hydroxylamine-based solutions, particulate generation was minimal.",

keywords = "Abrasive-free chemistries, Citric acid, Copper chemical-mechanical polishing (CMP), Fixed abrasive pad, Hydrogen peroxide, Hydroxylamine",

author = "Huang, {Wayne H.} and Subramanian Tamilmani and Creighton Anderson and Srini Raghavan",

note = "Funding Information: Manuscript received November 21, 2003; revised July 1, 2004. This work was supported in part by the NSF-SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing, University of Arizona, and by the Industrial Technology Research Institute (ITRI), Taiwan, R.O.C.",

year = "2004",

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doi = "10.1109/TSM.2004.835699",

language = "English (US)",

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AU - Huang, Wayne H.

AU - Tamilmani, Subramanian

AU - Anderson, Creighton

AU - Raghavan, Srini

N1 - Funding Information: Manuscript received November 21, 2003; revised July 1, 2004. This work was supported in part by the NSF-SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing, University of Arizona, and by the Industrial Technology Research Institute (ITRI), Taiwan, R.O.C.

PY - 2004/11

Y1 - 2004/11

N2 - Minimization of particulates levels during the chemical-mechanical planarization (CMP) process as well as in the waste streams is possible through the use of a fixed abrasive pad (FAP). The abrasion of electrodeposited copper films using an alumina-based FAP was studied in hydrogen peroxide and hydroxylamine-based chemistries. The removal rate of copper in hydrogen peroxide solutions was much lower than that in hydroxylamine-based solutions in the pH range of 3 to 9. The addition of citrate to peroxide solution enhances the removal rate of copper to a level that is comparable to removal rates in hydroxylamine-based solutions. Abrasion in a hydrogen peroxide solution resulted in the formation of copper and aluminum-based particulates in the solution. The addition of citrate to peroxide solutions reduced the generation of copper-based particulates that were generated in solution. In hydroxylamine-based solutions, particulate generation was minimal.

AB - Minimization of particulates levels during the chemical-mechanical planarization (CMP) process as well as in the waste streams is possible through the use of a fixed abrasive pad (FAP). The abrasion of electrodeposited copper films using an alumina-based FAP was studied in hydrogen peroxide and hydroxylamine-based chemistries. The removal rate of copper in hydrogen peroxide solutions was much lower than that in hydroxylamine-based solutions in the pH range of 3 to 9. The addition of citrate to peroxide solution enhances the removal rate of copper to a level that is comparable to removal rates in hydroxylamine-based solutions. Abrasion in a hydrogen peroxide solution resulted in the formation of copper and aluminum-based particulates in the solution. The addition of citrate to peroxide solutions reduced the generation of copper-based particulates that were generated in solution. In hydroxylamine-based solutions, particulate generation was minimal.

KW - Abrasive-free chemistries

KW - Citric acid

KW - Copper chemical-mechanical polishing (CMP)

KW - Fixed abrasive pad

KW - Hydrogen peroxide

KW - Hydroxylamine

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Material removal and particulate generation during abrasion of copper films using a fixed abrasive pad

Abstract

Keywords

ASJC Scopus subject areas

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