A detailed numerical study of the third-order nonlinear optical susceptibilities (χ(3)) of semiconductor quantum wells is presented. The dependence of χ(3) on material parameters (electron-hole mass ratio and exciton linewidths), on the light polarization configuration (co- and countercircularly polarized) and on the spectral configuration is discussed. The goal of this study is to map out the nonlinear phase shift per quantum well and a related figure of merit caused by quasi-resonant excitonic and biexcitonic nonlinearities induced by picosecond light pulses. The study is based on the dynamics-controlled truncation formalism and evaluated under the assumption that only 1s-heavy-hole excitons contribute to the nonlinearities. It includes all correlation effects (exciton-exciton scattering in the singlet and triplet channels and coherent biexciton formation in the singlet channel) that contribute within the coherent excitonic χ(3) regime.
|Original language||English (US)|
|Number of pages||11|
|Journal||Journal of the Optical Society of America B: Optical Physics|
|State||Published - Dec 2004|
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics