Mask fabrication towards sub-10 nm imprint lithography

Jian Gu, Chun Ping Jen, Qihuo Wei, Chiafu Chou, Frederic Zenhausern

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.

Original languageEnglish (US)
Article number41
Pages (from-to)382-391
Number of pages10
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Issue numberI
StatePublished - 2005
EventEmerging Lithographic Technologies IX - San Jose, CA, United States
Duration: Mar 1 2005Mar 3 2005


  • 2-dimensional oxidation
  • Crystalline silicon
  • Imprint lithography
  • Mask fabrication
  • Orientation dependent etching
  • Sidewall thin-film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging
  • Biomaterials


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