Mapping the Dirac point in gated bilayer graphene

A. Deshpande; W. Bao; Z. Zhao; C. N. Lau; B. J. Leroy

doi:10.1063/1.3275755

Mapping the Dirac point in gated bilayer graphene

A. Deshpande, W. Bao, Z. Zhao, C. N. Lau, B. J. Leroy

Physics

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO₂. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.

Original language	English (US)
Article number	243502
Journal	Applied Physics Letters
Volume	95
Issue number	24
DOIs	https://doi.org/10.1063/1.3275755
State	Published - Dec 14 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3275755

Cite this

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abstract = "We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.",

author = "A. Deshpande and W. Bao and Z. Zhao and Lau, {C. N.} and Leroy, {B. J.}",

note = "Funding Information: A.D. and B.J.L. acknowledge the support of the U. S. Army Research Laboratory and the U. S. Army Research Office under Contract/Grant No. W911NF-09-1-0333. W.B., Z.Z., and C.N.L. acknowledge support under Grants NSF CAREER DMR/0748910, NSF ECCS/0926056, ONR N00014-09-1-0724, and ONR/DMEA H94003-09-2-0901.",

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AU - Bao, W.

AU - Zhao, Z.

AU - Lau, C. N.

AU - Leroy, B. J.

N1 - Funding Information: A.D. and B.J.L. acknowledge the support of the U. S. Army Research Laboratory and the U. S. Army Research Office under Contract/Grant No. W911NF-09-1-0333. W.B., Z.Z., and C.N.L. acknowledge support under Grants NSF CAREER DMR/0748910, NSF ECCS/0926056, ONR N00014-09-1-0724, and ONR/DMEA H94003-09-2-0901.

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N2 - We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.

AB - We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.

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Mapping the Dirac point in gated bilayer graphene

Abstract

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