Mapping the Dirac point in gated bilayer graphene

A. Deshpande, W. Bao, Z. Zhao, C. N. Lau, B. J. Leroy

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a bandgap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.

Original languageEnglish (US)
Article number243502
JournalApplied Physics Letters
Issue number24
StatePublished - Dec 14 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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