Many-body aspects of excitonic Rabi oscillations in semiconductors

R. Binder; M. Lindberg; A. Schulzgen; M. E. Donavan; K. Wundke; H. M. Gibbs; G. Khitrova; N. Peyghambarian

doi:10.1117/12.356946

Many-body aspects of excitonic Rabi oscillations in semiconductors

R. Binder, M. Lindberg, A. Schulzgen, M. E. Donavan, K. Wundke, H. M. Gibbs, G. Khitrova, N. Peyghambarian

Research output: Contribution to journal › Conference article › peer-review

Abstract

A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.

Original language	English (US)
Pages (from-to)	80-87
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3625
DOIs	https://doi.org/10.1117/12.356946
State	Published - 1999
Event	Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA Duration: Jan 25 1999 → Jan 29 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.356946

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title = "Many-body aspects of excitonic Rabi oscillations in semiconductors",

abstract = "A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.",

author = "R. Binder and M. Lindberg and A. Schulzgen and Donavan, {M. E.} and K. Wundke and Gibbs, {H. M.} and G. Khitrova and N. Peyghambarian",

year = "1999",

doi = "10.1117/12.356946",

language = "English (US)",

volume = "3625",

pages = "80--87",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII ; Conference date: 25-01-1999 Through 29-01-1999",

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TY - JOUR

T1 - Many-body aspects of excitonic Rabi oscillations in semiconductors

AU - Binder, R.

AU - Lindberg, M.

AU - Schulzgen, A.

AU - Donavan, M. E.

AU - Wundke, K.

AU - Gibbs, H. M.

AU - Khitrova, G.

AU - Peyghambarian, N.

PY - 1999

Y1 - 1999

N2 - A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.

AB - A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.

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DO - 10.1117/12.356946

M3 - Conference article

AN - SCOPUS:0032685706

SN - 0277-786X

VL - 3625

SP - 80

EP - 87

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII

Y2 - 25 January 1999 through 29 January 1999

ER -

Many-body aspects of excitonic Rabi oscillations in semiconductors

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