Abstract
A theoretical study of excitonic Rabi oscillations in semiconductor quantum wells is presented. Fundamental differences between excitonic Rabi oscillations and optical Rabi oscillations in ideal atomic or molecular 2-level systems are due to the existence of the continuous 1-particle spectrum in solids (energy bands) and the resulting strong effects of the Coulomb interaction, such as the attractive electron-hole interaction and the repulsive exchange interaction. In spite of these fundamental differences, Rabi-like oscillations of the excited electron-hole densities are computed for the case of resonant optical pumping of excitons. We compare our theoretical results with our recent experimental observation of excitonic Rabi oscillations.
Original language | English (US) |
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Pages (from-to) | 80-87 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3625 |
DOIs | |
State | Published - 1999 |
Event | Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA Duration: Jan 25 1999 → Jan 29 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering