Magnetoresistance peaks in the neighborhood of coercivity in magneto-optical recording media

Perpendicular magnetoresistance data performed on magneto-optical samples with uniaxial magnetic anisotropy (perpendicular to the film plane) show a change of the resistance ΔR/R when the applied field reaches the coercive field. The various mechanisms that can lead to this phenomenon are investigated based on different magneto-optical films. In particular, the interaction of magnetic domains and domain walls with the electric current is interesting. Separating the two effects is important to understanding of the various galvanomagnetic and magnetic processes in these films. Three different mechanisms are considered in order to explain the data: The first mechanism is associated with the Hall effect, the second mechanism involves the anisotropic resistivity, and the third mechanism is related to the s-d scattering effect. Some of the experimental results are explained by modeling the current and electric-field distribution in these films. In the simulations the film is modeled by a two- or three-dimensional lattice with each branch in the lattice having its own resistivity tensor in order to simulate magnetic domains and domain walls in the film.