Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography

Kun Hua Tu; Eduardo Fernandez; Hamid Almasi; Weigang Wang; David Navas Otero; Konstantinos Ntetsikas; Dimitrios Moschovas; Apostolos Avgeropoulos; Caroline A. Ross

doi:10.1088/1361-6528/aabce8

Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography

Kun Hua Tu, Eduardo Fernandez, Hamid Almasi, Weigang Wang, David Navas Otero, Konstantinos Ntetsikas, Dimitrios Moschovas, Apostolos Avgeropoulos, Caroline A. Ross

Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First-order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

Original language	English (US)
Article number	275302
Journal	Nanotechnology
Volume	29
Issue number	27
DOIs	https://doi.org/10.1088/1361-6528/aabce8
State	Published - May 8 2018

Keywords

magnetic tunnel junction
nanolithography
nanomagnetism

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/aabce8

Cite this

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title = "Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography",

abstract = "Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First-order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.",

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T1 - Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography

AU - Tu, Kun Hua

AU - Fernandez, Eduardo

AU - Almasi, Hamid

AU - Wang, Weigang

AU - Otero, David Navas

AU - Ntetsikas, Konstantinos

AU - Moschovas, Dimitrios

AU - Avgeropoulos, Apostolos

AU - Ross, Caroline A.

PY - 2018/5/8

Y1 - 2018/5/8

N2 - Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First-order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

AB - Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First-order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.

KW - magnetic tunnel junction

KW - nanolithography

KW - nanomagnetism

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Magnetic reversal and thermal stability of CoFeB perpendicular magnetic tunnel junction arrays patterned by block copolymer lithography

Abstract

Keywords

ASJC Scopus subject areas

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